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W3E232M16S-266STC

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W3E232M16S-266STC

DDR1 DRAM, 64MX16, 0.7ns, CMOS, PDSO66

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation's W3E232M16S-266STC is a 1Gbit DDR1 DRAM with a 64M x 16 memory organization, offering a fast access time of 0.7ns. This synchronous memory component operates in CMOS technology and supports multi-bank page burst access modes. Key features include auto and self-refresh capabilities, making it suitable for applications requiring high data throughput and reliability. The component is housed in a 66-lead PDSO (Plastic Dual Small Outline) package, identified by the JESD-30 code R-PDSO-G66, with a terminal pitch of 0.65mm. Operating within a temperature range of 0°C to 70°C, it requires a supply voltage between 2.3V and 2.7V, with a nominal 2.5V. This memory solution is commonly employed in telecommunications infrastructure, industrial automation, and embedded systems where high-performance memory is critical.

Additional Information

Series: W3E232M16RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length22.3520
Width12.3190
TechnologyCMOS
Access_ModeMULTI BANK PAGE BURST
Access_Time_Max0.7000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-PDSO-G66
Memory_Density1073741824.0000000000000000
Memory_IC_TypeDDR1 DRAM
Memory_Organization64MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals66
Number_of_Words67108864.0000000000000000
Number_of_Words_Code64M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeATSOP
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, PIGGYBACK, THIN PROFILE
Seated_Height_Max2.7940
Self_RefreshYes
Supply_Voltage_Max2.70000
Supply_Voltage_Min2.30000
Supply_Voltage_Nom2.5
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.650
Terminal_PositionDual

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