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W3E232M16S-250STI

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W3E232M16S-250STI

DDR1 DRAM, 64MX16, 0.7ns, CMOS, PDSO66

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation W3E232M16S-250STI is a DDR1 DRAM component with a memory organization of 64 Meg x 16 bits, yielding a total density of 1 Gbit. This synchronous memory device offers a maximum access time of 0.7 ns and operates in CMOS technology. It supports auto and self-refresh functionalities, utilizing a multi-bank page burst access mode. The component is housed in a 66-terminal, thin profile, rectangular plastic package (R-PDSO-G66) with gull wing terminals and a 0.65 mm pitch, suitable for surface mounting. Operating within a temperature range of -40°C to +85°C, it requires a supply voltage between 2.3V and 2.7V, with a nominal value of 2.5V. This memory solution is typically integrated into industrial and telecommunications applications.

Additional Information

Series: W3E232M16RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length22.3520
Width12.3190
TechnologyCMOS
Access_ModeMULTI BANK PAGE BURST
Access_Time_Max0.7000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-PDSO-G66
Memory_Density1073741824.0000000000000000
Memory_IC_TypeDDR1 DRAM
Memory_Organization64MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals66
Number_of_Words67108864.0000000000000000
Number_of_Words_Code64M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeATSOP
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, PIGGYBACK, THIN PROFILE
Seated_Height_Max2.7940
Self_RefreshYes
Supply_Voltage_Max2.70000
Supply_Voltage_Min2.30000
Supply_Voltage_Nom2.5
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.650
Terminal_PositionDual

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