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W3E232M16S-200STC

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W3E232M16S-200STC

DDR1 DRAM, 64MX16, 0.7ns, CMOS, PDSO66

Manufacturer: Microsemi Corporation

Categories: DRAMs

Quality Control: Learn More

Microsemi Corporation W3E232M16S-200STC is a DDR1 DRAM component with a memory organization of 64M x 16 bits, delivering a total capacity of 1 Gigabit. This CMOS device features a maximum access time of 0.7 ns and operates in synchronous mode with a multi-bank page burst access mode. Key functionalities include auto and self-refresh capabilities. The component is housed in a 66-terminal PDSO (Plastic Dual Small Outline) package with a gull-wing terminal form, designed for surface mounting with a 0.65 mm terminal pitch. Operating within a temperature range of 0°C to 70°C, it requires a supply voltage between 2.3V and 2.7V, nominally 2.5V. This DRAM is suitable for applications in networking infrastructure, industrial automation, and consumer electronics.

Additional Information

Series: W3E232M16RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length22.3520
Width12.3190
TechnologyCMOS
Access_ModeMULTI BANK PAGE BURST
Access_Time_Max0.7000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-PDSO-G66
Memory_Density1073741824.0000000000000000
Memory_IC_TypeDDR1 DRAM
Memory_Organization64MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals66
Number_of_Words67108864.0000000000000000
Number_of_Words_Code64M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeATSOP
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, PIGGYBACK, THIN PROFILE
Seated_Height_Max2.7940
Self_RefreshYes
Supply_Voltage_Max2.70000
Supply_Voltage_Min2.30000
Supply_Voltage_Nom2.5
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.650
Terminal_PositionDual

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