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W3E16M64S-250BC

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W3E16M64S-250BC

DDR1 DRAM, 16MX64, 0.8ns, CMOS, PBGA219

Manufacturer: Microsemi Corporation

Categories: DRAMs

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The Microsemi Corporation W3E16M64S-250BC is a 1 Gbit DDR1 DRAM with a memory organization of 16M x 64. This synchronous memory device operates with a maximum clock frequency of 125 MHz, providing an access time of 0.8 ns. It supports a four bank page burst access mode and features auto/self refresh capabilities. The W3E16M64S-250BC utilizes CMOS technology and operates within a supply voltage range of 2.3V to 2.7V, with a nominal voltage of 2.5V. This component is housed in a 219-ball PBGA (R-PBGA-B219) package with bottom terminals and a 1.27mm pitch, suitable for surface mounting. Applications for this memory component include networking equipment, industrial control systems, and high-performance computing. It has an operating temperature range of 0°C to 70°C.

Additional Information

Series: W3E16M64RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max0.8000000000000000
Additional_FeatureAUTO/SELF REFRESH
Clock_Frequency_Max125.00000
I_O_TypeCOMMON
JESD_30_CodeR-PBGA-B219
Memory_Density1073741824.0000000000000000
Memory_IC_TypeDDR1 DRAM
Memory_Organization16MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals219
Number_of_Words16777216.0000000000000000
Number_of_Words_Code16m
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeBGA
Package_Equivalence_CodeBGA219,16X16,50
Package_ShapeRectangular
Package_StyleGRID ARRAY
Refresh_Cycles8192
Self_RefreshYes
Standby_Current_Max0.016000000000000
Supply_Current_Max1600.000000000000000
Supply_Voltage_Max2.70000
Supply_Voltage_Min2.30000
Supply_Voltage_Nom2.5
Surface_MountYes
Terminal_FormBall
Terminal_Pitch1.270
Terminal_PositionBottom

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