W3DG6465V10D2
Synchronous DRAM Module, 64MX64, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
Quality Control: Learn More
The Microsemi Corporation W3DG6465V10D2 is a 64MX64 Synchronous DRAM Module, part of the W3DG6465 series. This CMOS component features a four-bank page burst access mode and supports auto/self-refresh functionalities. With a memory density of 4294967296 bits and an organization of 64MX64, it offers 67108864 words. The module operates synchronously with a supply voltage range of 3.000V to 3.600V. Its 168-terminal package is designed for electronic assembly. This component is commonly utilized in industrial and communication systems.
Additional Information
Series: W3DG6465RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N168 |
| Memory_Density | 4294967296.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM MODULE |
| Memory_Organization | 64MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 168 |
| Number_of_Words | 67108864.0000000000000000 |
| Number_of_Words_Code | 64M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
Request a Quote
Clients Also Buy
W3DG6465V10D1-GG
Synchronous DRAM Module, 64MX64, CMOS
W3DG6465V10D1
Synchronous DRAM Module, 64MX64, CMOS
W3DG6465V75D1-GG
Synchronous DRAM Module, 64MX64, CMOS