W3DG6432V10BD1-GG
Synchronous DRAM Module, 32MX64, 6ns, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation presents the W3DG6432V10BD1-GG, a high-performance Synchronous DRAM Module from the W3DG6432 series. This component features a memory organization of 32Mx64, offering a total memory density of 2 Gigabits. It operates with a maximum access time of 6.0 ns and utilizes CMOS technology for efficient operation. The module supports dual bank page burst access modes and includes auto/self-refresh functionality. Designed for use in demanding applications, this component is suitable for telecommunications infrastructure, industrial control systems, and high-end computing platforms. It operates within a temperature range of 0°C to 70°C with a supply voltage range of 3.0V to 3.6V, nominally 3.3V. The W3DG6432V10BD1-GG is presented in a 140-terminal DIMM package style.
Additional Information
Series: W3DG6432RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | DUAL BANK PAGE BURST |
| Access_Time_Max | 6.0000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XZMA-N140 |
| Memory_Density | 2147483648.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM MODULE |
| Memory_Organization | 32MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 140 |
| Number_of_Words | 33554432.0000000000000000 |
| Number_of_Words_Code | 32M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | ZIG-ZAG |
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