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W3DG6418V10D2ISG

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W3DG6418V10D2ISG

Synchronous DRAM Module, 16MX64, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation W3DG6418V10D2ISG is a 16Mx64 Synchronous DRAM Module utilizing CMOS technology. This module offers a memory density of 1 Gbit and operates with a four-bank page burst access mode. Key features include auto and self-refresh capabilities, supporting a nominal supply voltage of 3.3V, with a range of 3.0V to 3.6V. The operating temperature spans from -40°C to 85°C. Designed as a 168-terminal DIMM package, this component is suitable for applications in networking, industrial automation, and high-performance computing where reliable memory solutions are critical. The memory organization is 16M words by 64 bits wide.

Additional Information

Series: W3DG6418RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N168
Memory_Density1073741824.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM MODULE
Memory_Organization16MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals168
Number_of_Words16777216.0000000000000000
Number_of_Words_Code16m
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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