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W3DG6418V10AD1-SG

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W3DG6418V10AD1-SG

Synchronous DRAM Module, 16MX64, 6ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation W3DG6418V10AD1-SG is a 144-terminal Synchronous DRAM Module with a memory organization of 16M words by 64 bits, providing a total density of 1 Gbit. This CMOS component operates synchronously with a maximum access time of 6ns and supports a four-bank page burst access mode. Key features include auto/self-refresh capabilities and a nominal supply voltage of 3.3V, with a range of 3.0V to 3.6V. The module is designed for applications requiring high-speed data access and is commonly found in computing, networking, and industrial automation systems. This Microsemi Corporation component is housed in a rectangular DIMM package, suitable for surface mount applications.

Additional Information

Series: W3DG6418RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max6.0000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N144
Memory_Density1073741824.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM MODULE
Memory_Organization16MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals144
Number_of_Words16777216.0000000000000000
Number_of_Words_Code16m
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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