W3DG6418V10AD1-M
Synchronous DRAM Module, 16MX64, 6ns, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation W3DG6418V10AD1-M is a 16Mx64 Synchronous DRAM Module with a 6ns access time, built on CMOS technology. This module features a four-bank page burst access mode and supports auto/self refresh functionality. With a memory density of 1073,741,824 bits, it is organized as 16 million words by 64 bits. The W3DG6418 series component operates synchronously and is housed in a 144-terminal DIMM package. It is suitable for applications requiring high-speed memory, including networking infrastructure, industrial control systems, and high-performance computing. The operating temperature range is 0.0°C to 70.0°C, with a supply voltage range of 3.0V to 3.6V.
Additional Information
Series: W3DG6418RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 6.0000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N144 |
| Memory_Density | 1073741824.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM MODULE |
| Memory_Organization | 16MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 144 |
| Number_of_Words | 16777216.0000000000000000 |
| Number_of_Words_Code | 16m |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
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