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W3DG6363V75D2-SG

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W3DG6363V75D2-SG

Synchronous DRAM Module, 64MX64, 5.4ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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The Microsemi Corporation W3DG6363V75D2-SG is a Synchronous DRAM Module from the W3DG6363 series. This CMOS component features a memory organization of 64M x 64 and a density of 4294967296 bits. It operates with a maximum access time of 5.4 ns and supports Dual Bank Page Burst access modes. Additional features include Auto/Self Refresh capabilities. The module has a 168-terminal configuration and is housed in a Rectangular DIMM package. It is designed for operation within a temperature range of 0°C to 70°C and requires a supply voltage between 3.0V and 3.6V. This component finds application in telecommunications and industrial systems.

Additional Information

Series: W3DG6363RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeDUAL BANK PAGE BURST
Access_Time_Max5.4000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N168
Memory_Density4294967296.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM MODULE
Memory_Organization64MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals168
Number_of_Words67108864.0000000000000000
Number_of_Words_Code64M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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