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W3DG6318V10D2MG

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W3DG6318V10D2MG

Synchronous DRAM Module, 16MX64, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation's W3DG6318V10D2MG is a 16MX64 Synchronous DRAM Module utilizing CMOS technology. This component features a four-bank page burst access mode and supports auto/self-refresh functions. With a memory density of 1073.74 Mbits and an organization of 16M words by 64 bits, it operates synchronously and is housed in a 168-terminal DIMM package. The module is designed for operation within a temperature range of 0°C to 70°C and requires a supply voltage between 3.0V and 3.6V, with a nominal 3.3V. This device finds application in computing, networking, and industrial automation sectors.

Additional Information

Series: W3DG6318RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N168
Memory_Density1073741824.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM MODULE
Memory_Organization16MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals168
Number_of_Words16777216.0000000000000000
Number_of_Words_Code16m
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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