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W3DG63126V7D2G

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W3DG63126V7D2G

Synchronous DRAM Module, 128MX64, 5.4ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation W3DG63126V7D2G is a Synchronous DRAM Module featuring a 128Mx64 organization. This component operates with a maximum access time of 5.4ns and utilizes CMOS technology. It supports dual bank page burst access mode and includes auto/self refresh functionality. The module provides a total memory density of 8589934592 bits and is housed in a 168-terminal DIMM package. Designed for applications requiring high-speed data access and storage, this module is suitable for use in networking infrastructure, computing systems, and industrial automation. The operating voltage ranges from 3.0V to 3.6V, with a nominal supply of 3.3V, and operates within a temperature range of 0°C to 70°C.

Additional Information

Series: W3DG63126V7D2GRoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeDUAL BANK PAGE BURST
Access_Time_Max5.4000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N168
Memory_Density8589934592.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM MODULE
Memory_Organization128MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals168
Number_of_Words134217728.0000000000000000
Number_of_Words_Code128M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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