W3DG63126V10D2G
Synchronous DRAM Module, 128MX64, 6ns, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
Quality Control: Learn More
Microsemi Corporation W3DG63126V10D2G is a Synchronous DRAM Module featuring a 128M x 64 organization, providing a total memory density of 8589934592 bits. This CMOS component offers a maximum access time of 6ns and operates in synchronous mode with dual bank page burst access. Key features include auto/self refresh capabilities and a nominal supply voltage of 3.3V, with a range of 3.0V to 3.6V. The module utilizes a 168-terminal DIMM package suitable for applications demanding high-speed memory access. This component is commonly employed in telecommunications infrastructure, industrial automation, and high-performance computing systems.
Additional Information
Series: W3DG63126V10D2GRoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | DUAL BANK PAGE BURST |
| Access_Time_Max | 6.0000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N168 |
| Memory_Density | 8589934592.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM MODULE |
| Memory_Organization | 128MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 168 |
| Number_of_Words | 134217728.0000000000000000 |
| Number_of_Words_Code | 128M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
Request a Quote
Clients Also Buy
W3EG72125S335JD3SG
DDR DRAM Module, 128MX72, 0.7ns, CMOS
WV3HG64M72EEU665PD4MG
DDR DRAM Module, 64MX72, 0.45ns, CMOS
WED3DG644V7WD1I-SG
Synchronous DRAM Module, 4MX64, CMOS