W364M72V-ESSB
Synchronous DRAM, 64MX72, 6ns, CMOS, PBGA219Manufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation W364M72V-ESSB is a 4Gb Synchronous DRAM, featuring a 64Mx72 organization and a maximum access time of 6ns. This CMOS component operates with a four-bank page burst access mode and supports auto/self refresh functionalities. The W364M72 series memory IC is housed in a 219-ball PBGA package (R-PBGA-B219) with a 1.27mm terminal pitch. It operates within a supply voltage range of 3.0V to 3.6V, with a nominal voltage of 3.3V. This surface-mount device is suitable for applications in telecommunications, networking infrastructure, and high-performance computing systems demanding high-speed memory solutions.
Additional Information
Series: W364M72RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 6.0000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-PBGA-B219 |
| Memory_Density | 4831838208.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM |
| Memory_Organization | 64MX72 |
| Memory_Width | 72 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 219 |
| Number_of_Words | 67108864.0000000000000000 |
| Number_of_Words_Code | 64M |
| Operating_Mode | Synchronous |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
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