W332M72V-ESSB
Synchronous DRAM Module, 32MX72, CMOS, PBGA208Manufacturer: Microsemi Corporation
Categories: DRAMs
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The Microsemi Corporation W332M72V-ESSB is a Synchronous DRAM Module from the W332M72 series. This component features a 32Mx72 memory organization, delivering a total memory density of 2415.92 Mbits and a word count of 33,554,432. It operates synchronously with a four-bank page burst access mode and supports auto-refresh functionality. The module is housed in a 208-terminal PBGA (Plastic Ball Grid Array) package with a 1.000mm terminal pitch, designed for surface mounting. Its CMOS technology ensures efficient operation within a supply voltage range of 3.000V to 3.600V, with a nominal value of 3.3V. This component is suitable for applications requiring high-speed data buffering and storage in areas such as telecommunications, networking equipment, and industrial control systems.
Additional Information
Series: W332M72RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Additional_Feature | AUTO REFRESH |
| JESD_30_Code | R-PBGA-B208 |
| Memory_Density | 2415919104.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM MODULE |
| Memory_Organization | 32MX72 |
| Memory_Width | 72 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 208 |
| Number_of_Words | 33554432.0000000000000000 |
| Number_of_Words_Code | 32M |
| Operating_Mode | Synchronous |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.000 |
| Terminal_Position | Bottom |
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