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W332M64V-133BC

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W332M64V-133BC

Synchronous DRAM, 32MX64, 5.5ns, CMOS, PBGA219

Manufacturer: Microsemi Corporation

Categories: DRAMs

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The Microsemi Corporation W332M64V-133BC is a high-performance Synchronous DRAM component from the W332M64 series. This device offers a density of 2Gb, organized as 32M words by 64 bits, and features a rapid 5.5ns maximum access time. It operates using CMOS technology and supports a four-bank page burst access mode. Key features include auto/self refresh capabilities and a nominal supply voltage of 3.3V, with a range of 3.0V to 3.6V. The component is housed in a 219-ball PBGA (Plastic Ball Grid Array) package, suitable for surface mounting. This DRAM is utilized in demanding applications across the telecommunications, networking, and industrial sectors.

Additional Information

Series: W332M64RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max5.5000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeS-PBGA-B219
Memory_Density2147483648.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM
Memory_Organization32MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals219
Number_of_Words33554432.0000000000000000
Number_of_Words_Code32M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeBGA
Package_ShapeSquare
Package_StyleGRID ARRAY
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormBall
Terminal_PositionBottom

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