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MS46H64M32L2SB-6I

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MS46H64M32L2SB-6I

64MX32, 5.5ns, CMOS, PBGA152

Manufacturer: Microsemi Corporation

Categories: DRAMs

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The Microsemi Corporation MS46H64M32L2SB-6I is a 2Gb LPDDR1 DRAM component featuring a 64M x 32 memory organization. This synchronous memory operates with a maximum access time of 5.5ns and utilizes CMOS technology. Its access mode is FOUR BANK PAGE BURST, supporting AUTO/SELF REFRESH functionality. The component is housed in a 152-ball PBGA (LFBGA) package with a 0.65mm terminal pitch and a low profile (1.28mm max seated height). Operating across a temperature range of -40°C to +85°C, it requires a supply voltage between 1.7V and 1.95V, with a nominal 1.8V. Applications for this high-speed memory component are found in consumer electronics, industrial automation, and telecommunications infrastructure.

Additional Information

Series: MS46H64M32RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length14.0000
Width14.0000
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max5.5000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeS-PBGA-B152
Memory_Density2147483648.0000000000000000
Memory_IC_TypeLPDDR1 DRAM
Memory_Organization64MX32
Memory_Width32
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals152
Number_of_Words67108864.0000000000000000
Number_of_Words_Code64M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeLFBGA
Package_ShapeSquare
Package_StyleGRID ARRAY, LOW PROFILE, FINE PITCH
Seated_Height_Max1.2800
Self_RefreshYes
Supply_Voltage_Max1.95000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountYes
Terminal_FormBall
Terminal_Pitch0.650
Terminal_PositionBottom

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