UFT5010A
DIODE GP 100V 25A TO-3Manufacturer: Microsemi Corporation
Categories: Diode Arrays
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Microsemi Corporation's UFT5010A is a high-performance diode array featuring a common anode configuration. This component provides 100V of reverse voltage capability and a significant 25A average rectified current per diode. With a fast recovery time of 35 ns, it is suitable for applications requiring efficient switching. The UFT5010A exhibits a low forward voltage drop of 1V at 25A and a minimal reverse leakage current of 15 µA at 100V. Operating across a wide temperature range from -65°C to 175°C, this diode array is engineered for reliability in demanding environments. Its robust design makes it a valuable solution for power supply circuits, motor control, and industrial power applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | - |
| Mounting Type | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 25A |
| Supplier Device Package | - |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 25 A |
| Current - Reverse Leakage @ Vr | 15 µA @ 100 V |
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