APT10SCD65KCT
DIODE ARR SIC SCHOT 650V TO220Manufacturer: Microsemi Corporation
Categories: Diode Arrays
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Microsemi Corporation's APT10SCD65KCT is a Silicon Carbide (SiC) Schottky diode array featuring a common cathode configuration. This through-hole component, packaged in a TO-220-3, offers a maximum DC reverse voltage of 650V and an average rectified current of 17A per diode. It exhibits a low forward voltage drop of 1.8V at 10A and minimal reverse leakage of 200 µA at 650V. The device is characterized by its zero reverse recovery time, indicating superior switching performance. Operating across a junction temperature range of -55°C to 150°C, the APT10SCD65KCT is suitable for demanding applications in power factor correction, switch mode power supplies, and electric vehicle charging infrastructure.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 17A |
| Supplier Device Package | TO-220 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
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