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APT10SCD65KCT

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APT10SCD65KCT

DIODE ARR SIC SCHOT 650V TO220

Manufacturer: Microsemi Corporation

Categories: Diode Arrays

Quality Control: Learn More

Microsemi Corporation's APT10SCD65KCT is a Silicon Carbide (SiC) Schottky diode array featuring a common cathode configuration. This through-hole component, packaged in a TO-220-3, offers a maximum DC reverse voltage of 650V and an average rectified current of 17A per diode. It exhibits a low forward voltage drop of 1.8V at 10A and minimal reverse leakage of 200 µA at 650V. The device is characterized by its zero reverse recovery time, indicating superior switching performance. Operating across a junction temperature range of -55°C to 150°C, the APT10SCD65KCT is suitable for demanding applications in power factor correction, switch mode power supplies, and electric vehicle charging infrastructure.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-220-3
Mounting TypeThrough Hole
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Diode Configuration1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode)17A
Supplier Device PackageTO-220
Operating Temperature - Junction-55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max) @ If1.8 V @ 10 A
Current - Reverse Leakage @ Vr200 µA @ 650 V

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