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APT10SCD120BCT

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APT10SCD120BCT

DIODE ARR SIC SCHOT 1200V TO247

Manufacturer: Microsemi Corporation

Categories: Diode Arrays

Quality Control: Learn More

The Microsemi Corporation APT10SCD120BCT is a Silicon Carbide (SiC) Schottky diode array configured as a 1 pair common cathode. This component offers a maximum DC reverse voltage of 1200V and an average rectified current of 36A per diode. It features a low forward voltage drop of 1.8V at 10A and a reverse leakage current of 200 µA at 1200V. The device exhibits no recovery time above 500mA, characteristic of SiC Schottky technology. Packaged in a TO-247-3 through-hole format, it operates across a junction temperature range of -55°C to 150°C. Applications for this component are found in high-voltage power conversion systems, including electric vehicle charging, industrial power supplies, and renewable energy inverters.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Diode Configuration1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode)36A (DC)
Supplier Device PackageTO-247
Operating Temperature - Junction-55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If1.8 V @ 10 A
Current - Reverse Leakage @ Vr200 µA @ 1200 V

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