APT10SCD120BCT
DIODE ARR SIC SCHOT 1200V TO247Manufacturer: Microsemi Corporation
Categories: Diode Arrays
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The Microsemi Corporation APT10SCD120BCT is a Silicon Carbide (SiC) Schottky diode array configured as a 1 pair common cathode. This component offers a maximum DC reverse voltage of 1200V and an average rectified current of 36A per diode. It features a low forward voltage drop of 1.8V at 10A and a reverse leakage current of 200 µA at 1200V. The device exhibits no recovery time above 500mA, characteristic of SiC Schottky technology. Packaged in a TO-247-3 through-hole format, it operates across a junction temperature range of -55°C to 150°C. Applications for this component are found in high-voltage power conversion systems, including electric vehicle charging, industrial power supplies, and renewable energy inverters.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 36A (DC) |
| Supplier Device Package | TO-247 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V |
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