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JANTXV2N3811

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JANTXV2N3811

TRANS 2PNP 60V 0.05A TO78

Manufacturer: Microsemi Corporation

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Microsemi Corporation JANTXV2N3811 is a dual PNP bipolar junction transistor (BJT) array housed in a TO-78-6 metal can package. This military-grade component is rated for a collector-emitter breakdown voltage of 60V and a continuous collector current of up to 50mA. It features a minimum DC current gain (hFE) of 300 at 1mA and 5V, with a Vce(sat) of 250mV at 100µA and 1mA. The device exhibits a collector cutoff current (ICBO) of 10µA (max) and a maximum power dissipation of 350mW. Operating temperature ranges from -65°C to 200°C. This component is qualified to MIL-PRF-19500/336 and is suitable for applications in aerospace and defense.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-78-6 Metal Can
Mounting TypeThrough Hole
Transistor Type2 PNP (Dual)
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max350mW
Current - Collector (Ic) (Max)50mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic250mV @ 100µA, 1mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 1mA, 5V
Frequency - Transition-
Supplier Device PackageTO-78-6
GradeMilitary
QualificationMIL-PRF-19500/336

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