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JANTX2N3811U

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JANTX2N3811U

TRANS 2PNP 60V 0.05A

Manufacturer: Microsemi Corporation

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Microsemi Corporation JANTX2N3811U is a bipolar junction transistor (BJT) array featuring two complementary PNP transistors in a single TO-78-6 metal can package. This component is qualified to MIL-PRF-19500/336 and operates within a temperature range of -65°C to 200°C. Each transistor offers a collector-emitter breakdown voltage of 60V and can handle a continuous collector current of up to 50mA. The device exhibits a minimum DC current gain (hFE) of 300 at 1mA collector current and 5V collector-emitter voltage. Saturation voltage (Vce(sat)) is specified at a maximum of 250mV with 100µA base current and 1mA collector current. The maximum power dissipation per transistor is 350mW. This device is suitable for demanding applications in aerospace and defense.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-78-6 Metal Can
Mounting TypeThrough Hole
Transistor Type2 PNP (Dual)
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max350mW
Current - Collector (Ic) (Max)50mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic250mV @ 100µA, 1mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 1mA, 5V
Frequency - Transition-
Supplier Device PackageTO-78-6
GradeMilitary
QualificationMIL-PRF-19500/336

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