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JAN2N3811U

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JAN2N3811U

TRANS 2PNP 60V 0.05A

Manufacturer: Microsemi Corporation

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Microsemi Corporation JAN2N3811U is a bipolar junction transistor array featuring two PNP transistors in a TO-78-6 metal can package. This device offers a 60V collector-emitter breakdown voltage and a maximum collector current of 50mA. The minimum DC current gain (hFE) is rated at 300 at 1mA collector current and 5V collector-emitter voltage. It exhibits a Vce(sat) of 250mV maximum at 100µA base current and 1mA collector current. The maximum collector cutoff current (ICBO) is 10µA. With a power dissipation rating of 350mW, this component is suitable for through-hole mounting and operates across an extended temperature range of -65°C to 200°C. Qualified to MIL-PRF-19500/336, this military-grade transistor array finds application in aerospace and defense systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-78-6 Metal Can
Mounting TypeThrough Hole
Transistor Type2 PNP (Dual)
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max350mW
Current - Collector (Ic) (Max)50mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic250mV @ 100µA, 1mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 1mA, 5V
Frequency - Transition-
Supplier Device PackageTO-78-6
GradeMilitary
QualificationMIL-PRF-19500/336

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