JAN2N3811L
TRANS 2PNP 60V 0.05A TO78Manufacturer: Microsemi Corporation
Categories: Bipolar Transistor Arrays
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Microsemi Corporation JAN2N3811L is a dual PNP bipolar junction transistor (BJT) array designed for demanding applications. This component, housed in a TO-78-6 metal can package, features a collector-emitter breakdown voltage of 60V and a maximum collector current of 50mA. The device offers a minimum DC current gain (hFE) of 300 at 1mA and 5V. With a maximum power dissipation of 350mW and a wide operating temperature range of -65°C to 200°C, it is suitable for military-grade applications, meeting MIL-PRF-19500/336 qualification. The JAN2N3811L is utilized in areas requiring reliable performance under extreme conditions.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-78-6 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Power - Max | 350mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-78-6 |
| Grade | Military |
| Qualification | MIL-PRF-19500/336 |
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