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2N3811U

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2N3811U

TRANS 2PNP 60V 0.05A TO-78

Manufacturer: Microsemi Corporation

Categories: Bipolar Transistor Arrays

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Microsemi Corporation's 2N3811U is a bipolar transistor array featuring two complementary PNP transistors in a single TO-78-6 metal can package. This component offers a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 50mA. With a minimum DC current gain (hFE) of 300 at 1mA and 5V, it is suitable for applications requiring low current gain at minimal bias. The device exhibits a Vce(sat) of 250mV at 100µA/1mA and a collector cutoff current (ICBO) of 10µA. Designed for through-hole mounting, it operates across a wide temperature range of -65°C to 200°C. This transistor array finds application in various industrial and aerospace environments.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-78-6 Metal Can
Mounting TypeThrough Hole
Transistor Type2 PNP (Dual)
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max350mW
Current - Collector (Ic) (Max)50mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic250mV @ 100µA, 1mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 1mA, 5V
Frequency - Transition-
Supplier Device PackageTO-78-6

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