2N3811L
TRANS 2PNP 60V 0.05A TO-78Manufacturer: Microsemi Corporation
Categories: Bipolar Transistor Arrays
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Microsemi Corporation 2N3811L is a dual PNP bipolar junction transistor (BJT) housed in a TO-78-6 metal can package. This device features a collector-emitter breakdown voltage of 60V and a maximum collector current of 50mA. The minimum DC current gain (hFE) is specified at 300 for a collector current of 1mA and a collector-emitter voltage of 5V. The transistor exhibits a Vce(sat) of 250mV at an operating point of 100µA base current and 1mA collector current. With a maximum power dissipation of 350mW, this component is suitable for applications operating within a temperature range of -65°C to 200°C. The 2N3811L is commonly utilized in industrial and defense sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-78-6 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Power - Max | 350mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-78-6 |
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