UTV8100B
RF TRANS NPN 60V 860MHZ 55RTManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation UTV8100B is a high-power NPN RF transistor designed for demanding applications. This component operates within the 470MHz to 860MHz frequency range, delivering a typical gain of 8.5dB to 9.5dB. With a maximum collector current of 15A and a breakdown voltage of 60V, it is engineered for robust performance. The UTV8100B offers a maximum power dissipation of 290W and features a chassis mount design, specifically utilizing the 55RT package for efficient thermal management. Its high junction operating temperature of 200°C makes it suitable for environments requiring sustained high-power RF output. This device finds application in broadcast transmitters, industrial heating, and radar systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55RT |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 8.5dB ~ 9.5dB |
| Power - Max | 290W |
| Current - Collector (Ic) (Max) | 15A |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 1A, 5V |
| Frequency - Transition | 470MHz ~ 860MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55RT |
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