UTV200
RF TRANS NPN 28V 860MHZ 55JVManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's UTV200 is an NPN RF transistor designed for high-power applications. This component operates within a frequency range of 470MHz to 860MHz, delivering a typical gain of 8.5dB to 9.5dB. With a maximum collector current of 4.5A and a collector emitter breakdown voltage of 28V, the UTV200 is rated for a maximum power output of 80W. Its robust construction allows for operation at junction temperatures up to 200°C. The device features a chassis mount design for efficient thermal management, utilizing the 55JV package. This transistor is suitable for use in demanding RF power amplification circuits across various industrial and commercial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55JV |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 8.5dB ~ 9.5dB |
| Power - Max | 80W |
| Current - Collector (Ic) (Max) | 4.5A |
| Voltage - Collector Emitter Breakdown (Max) | 28V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 1A, 5V |
| Frequency - Transition | 470MHz ~ 860MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55JV |
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