UTV080
RF TRANS NPN 28V 860MHZ 55JVManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation UTV080 is an NPN bipolar RF transistor designed for high-power applications. This device operates within a frequency range of 470MHz to 860MHz, offering a typical gain of 9dB to 10dB. It supports a collector current of up to 2.5A and a collector-emitter breakdown voltage of 28V. The UTV080 is rated for a maximum power output of 65W and features a high junction temperature capability of 200°C. The transistor is housed in a 55JV package and utilizes a channel, DIN rail mount for convenient integration into systems. This component is commonly found in RF power amplification and linear amplification stages across various industrial and telecommunications applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55JV |
| Mounting Type | Channel, DIN Rail Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 9dB ~ 10dB |
| Power - Max | 65W |
| Current - Collector (Ic) (Max) | 2.5A |
| Voltage - Collector Emitter Breakdown (Max) | 28V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 500mA, 5V |
| Frequency - Transition | 470MHz ~ 860MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55JV |
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