UTV020
RF TRANS NPN 25V 860MHZ 55FTManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's UTV020 is a high-power NPN bipolar RF transistor designed for demanding applications. Featuring a robust 25V collector-emitter breakdown voltage and a maximum collector current of 1.2A, this component delivers up to 17W of power. Its operational frequency range spans from 470MHz to 860MHz, with a guaranteed gain of 12dB. The UTV020 is engineered for reliable performance in challenging thermal environments, operating at junction temperatures up to 200°C. Its 55FT package with chassis, stud mount facilitates efficient thermal management. This device is suitable for use in base station infrastructure, industrial heating, and other RF power amplification systems requiring robust performance and high efficiency.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55FT |
| Mounting Type | Chassis, Stud Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 12dB |
| Power - Max | 17W |
| Current - Collector (Ic) (Max) | 1.2A |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 250mA, 5V |
| Frequency - Transition | 470MHz ~ 860MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55FT |
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