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UMIL100A

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UMIL100A

RF TRANS NPN 31V 400MHZ 55JU

Manufacturer: Microsemi Corporation

Categories: Bipolar RF Transistors

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Microsemi Corporation UMIL100A, an NPN bipolar RF transistor, is engineered for high-power RF applications. This component operates within a frequency range of 225MHz to 400MHz, delivering a power output of 270W. Key specifications include a collector current (Ic) capability of 20A and a collector-emitter breakdown voltage of 31V. The device exhibits a minimum DC current gain (hFE) of 10 at 1A and 5V, with a typical gain of 7.2dB to 8.5dB. Designed for robust performance, it features a chassis mount package (55JU) and an operating junction temperature of up to 150°C. This transistor is suitable for use in industrial, defense, and broadcast applications where reliable high-frequency power amplification is critical.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case55JU
Mounting TypeChassis Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain7.2dB ~ 8.5dB
Power - Max270W
Current - Collector (Ic) (Max)20A
Voltage - Collector Emitter Breakdown (Max)31V
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 1A, 5V
Frequency - Transition225MHz ~ 400MHz
Noise Figure (dB Typ @ f)-
Supplier Device Package55JU

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