TPR700
RF TRANS NPN 65V 1.09GHZ 55KTManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation offers the TPR700, an NPN bipolar RF transistor designed for high-power applications. This component features a collector-emitter breakdown voltage of 65V and can handle a continuous collector current of up to 55A. Operating within a frequency range of 1.03GHz to 1.09GHz, the TPR700 delivers a typical gain of 6.7dB. Its robust design is evident in its 2050W maximum power dissipation and chassis mount packaging (55KT), making it suitable for demanding environments. The DC current gain (hFE) is a minimum of 10 at 1A and 5V. This device is utilized in industries requiring high-frequency power amplification, such as broadcasting and industrial RF heating.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55KT |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 6.7dB |
| Power - Max | 2050W |
| Current - Collector (Ic) (Max) | 55A |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 1A, 5V |
| Frequency - Transition | 1.03GHz ~ 1.09GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55KT |
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