TPR175
RF TRANS NPN 55V 1.09GHZ 55CXManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation TPR175 is an NPN bipolar RF transistor designed for high-power applications. This chassis-mount device operates within the 1.03GHz to 1.09GHz frequency range, delivering a typical gain of 8dB to 9dB. It is rated for a collector current of 9A and a collector-emitter breakdown voltage of 55V, with a maximum power dissipation of 290W. The TPR175 features a minimum DC current gain (hFE) of 10 at 20mA and 5V. Its high operating junction temperature of 200°C makes it suitable for demanding environments. The 55CX package ensures robust thermal management. This component is commonly utilized in broadband linear power amplifiers and high-power RF applications within the telecommunications and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55CX |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 8dB ~ 9dB |
| Power - Max | 290W |
| Current - Collector (Ic) (Max) | 9A |
| Voltage - Collector Emitter Breakdown (Max) | 55V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 20mA, 5V |
| Frequency - Transition | 1.03GHz ~ 1.09GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55CX |
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