TPR1000A
RF TRANS 65V 1.09GHZ 55KVManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation TPR1000A is a high-power RF Power Bipolar Transistor designed for demanding applications. Featuring a 65V collector-emitter breakdown voltage and a maximum collector current of 80A, this device offers a robust solution for power amplification. Its transition frequency of 1.09GHz and a gain of 6dB make it suitable for operation within this frequency range. The TPR1000A is engineered with a 2900W maximum power dissipation and utilizes a chassis mount for efficient thermal management, operating at temperatures up to 200°C. The 55KV package provides the necessary electrical isolation and mechanical stability. This component is commonly employed in high-power RF systems, broadcast transmitters, and industrial heating applications where reliability and performance are paramount.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55KV |
| Mounting Type | Chassis Mount |
| Transistor Type | - |
| Operating Temperature | 200°C |
| Gain | 6dB |
| Power - Max | 2900W |
| Current - Collector (Ic) (Max) | 80A |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 1A, 5V |
| Frequency - Transition | 1.09GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55KV |
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