TPR1000
RF TRANS NPN 65V 1.09GHZ 55KVManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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The Microsemi Corporation TPR1000 is an NPN bipolar RF transistor designed for high-power applications. Featuring a 65V collector-emitter breakdown voltage and a maximum collector current of 80A, this device excels at 1.09GHz with a typical gain of 6dB. Its robust 2900W power dissipation capability, combined with a chassis mount package (55KV), makes it suitable for demanding environments. The TPR1000 offers a minimum DC current gain (hFE) of 10 at 1A and 5V. Operating temperature up to 200°C (TJ) ensures reliability in harsh conditions. This component finds application in various high-power RF systems, including broadcast transmitters and industrial heating equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55KV |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 6dB |
| Power - Max | 2900W |
| Current - Collector (Ic) (Max) | 80A |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 1A, 5V |
| Frequency - Transition | 1.09GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55KV |