TCS800
RF TRANS NPN 65V 1.03GHZ 55SMManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation TCS800 is an NPN bipolar RF transistor designed for high-power applications. This chassis mount component delivers a maximum collector current of 50A and features a collector-emitter breakdown voltage of 65V. With a transition frequency of 1.03GHz, the TCS800 offers a typical gain of 8dB to 9dB. The device is rated for a maximum power dissipation of 1944W and operates efficiently across a wide temperature range, up to 230°C (TJ). The 55SM package ensures robust thermal management for demanding environments. This RF transistor finds application in power amplification and switching within industrial and telecommunications infrastructure.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55SM |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 230°C (TJ) |
| Gain | 8dB ~ 9dB |
| Power - Max | 1944W |
| Current - Collector (Ic) (Max) | 50A |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5A, 5V |
| Frequency - Transition | 1.03GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55SM |
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