TCS1200
RF TRANS NPN 65V 1.03GHZ 55TU-1Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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The Microsemi Corporation TCS1200 is a high-power NPN RF Transistor designed for demanding applications. Featuring a 65V collector-emitter breakdown voltage and capable of handling 60A collector current, this device operates efficiently at frequencies up to 1.03GHz. Its robust 2095W maximum power dissipation, coupled with a 10.2dBd gain and a minimum DC current gain of 20 at 1A/5V, makes it suitable for high-power RF amplification. The TCS1200 is housed in a 55TU-1 chassis mount package, facilitating thermal management in high-temperature environments up to 200°C. This transistor finds use in critical infrastructure, defense, and industrial applications requiring reliable high-frequency power handling.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55TU-1 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 10.2dBd |
| Power - Max | 2095W |
| Current - Collector (Ic) (Max) | 60A |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 1A, 5V |
| Frequency - Transition | 1.03GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55TU-1 |
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