TAN75A
RF TRANS NPN 50V 1.215GHZ 55AZManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's TAN75A is an NPN bipolar RF transistor designed for high-power applications. This chassis-mount component operates within a frequency range of 960MHz to 1.215GHz, delivering a typical power output of 290W. Key specifications include a collector current (Ic) of 9A and a collector-emitter breakdown voltage of 50V. The device exhibits a minimum DC current gain (hFE) of 10 at 15mA and 5V, with an associated gain of 8dB to 8.5dB. Its robust construction and operating temperature up to 200°C make it suitable for demanding environments in aerospace, defense, and industrial applications requiring reliable RF power amplification. The TAN75A is supplied in Bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55AZ |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 8dB ~ 8.5dB |
| Power - Max | 290W |
| Current - Collector (Ic) (Max) | 9A |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 15mA, 5V |
| Frequency - Transition | 960MHz ~ 1.215GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55AZ |
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