TAN350
RF TRANS NPN 65V 1.215GHZ 55STManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's TAN350 is an NPN bipolar RF transistor designed for high-power applications. This chassis-mount component operates within the 960MHz to 1.215GHz frequency range, featuring a collector current capability of 40A and a maximum collector-emitter breakdown voltage of 65V. The device offers a typical power output of 1450W and a gain range of 7dB to 7.5dB. With a minimum DC current gain (hFE) of 10 at 1A and 5V, the TAN350 is suitable for demanding RF power amplification in communication systems, industrial heating, and radar applications. Its robust 55ST package is engineered for efficient thermal management at operating junction temperatures up to 230°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55ST |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 230°C (TJ) |
| Gain | 7dB ~ 7.5dB |
| Power - Max | 1450W |
| Current - Collector (Ic) (Max) | 40A |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 1A, 5V |
| Frequency - Transition | 960MHz ~ 1.215GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55ST |
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