TAN250A
RF TRANS NPN 60V 1.215GHZ 55AWManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's TAN250A is an NPN bipolar RF power transistor. This chassis mount device operates within a frequency range of 960MHz to 1.215GHz, delivering a nominal gain of 6.2dB to 7dB. The TAN250A supports a maximum collector current (Ic) of 30A and a collector-emitter breakdown voltage (Vceo) of 60V. It offers a minimum DC current gain (hFE) of 10 at 1A, 5V. With a maximum power dissipation of 575W and an operating junction temperature of 200°C, this transistor is suited for demanding applications. The 55AW package provides robust thermal management for high-power RF performance. This component is commonly utilized in industrial, defense, and telecommunications sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55AW |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 6.2db ~ 7dB |
| Power - Max | 575W |
| Current - Collector (Ic) (Max) | 30A |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 1A, 5V |
| Frequency - Transition | 960MHz ~ 1.215GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55AW |
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