TAN150
RF TRANS NPN 55V 1.215GHZ 55ATManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's TAN150 is an NPN RF Power Transistor designed for high-power applications. This device operates within the 960MHz to 1.215GHz frequency range, offering a typical gain of 7dB. The TAN150 features a high collector current rating of 15A and a collector-emitter breakdown voltage of 55V. With a maximum power dissipation of 583W, it is engineered for robust performance. The minimum DC current gain (hFE) is 10 at 1A and 5V. The transistor type is NPN and it is presented in a 55AT package suitable for chassis mounting. This component is commonly utilized in industrial, defense, and telecommunications sectors requiring high-frequency power amplification.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55AT |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 7dB |
| Power - Max | 583W |
| Current - Collector (Ic) (Max) | 15A |
| Voltage - Collector Emitter Breakdown (Max) | 55V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 1A, 5V |
| Frequency - Transition | 960MHz ~ 1.215GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55AT |