SD1127
RF TRANS NPN 18V 175MHZ TO39Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation SD1127 is an NPN Bipolar RF Transistor designed for high-power applications. This component features a collector-emitter breakdown voltage of 18V and a maximum collector current of 640mA. With a power dissipation capability of 8W and a transition frequency of 175MHz, the SD1127 delivers a typical gain of 12dB. The DC current gain (hFE) is a minimum of 10 at 50mA and 5V. Manufactured by Microsemi Corporation, this RF transistor is housed in a TO-39 package, suitable for through-hole mounting. Its robust construction allows for operation at temperatures up to 200°C (TJ). The SD1127 finds application in various industries requiring reliable RF amplification.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 12dB |
| Power - Max | 8W |
| Current - Collector (Ic) (Max) | 640mA |
| Voltage - Collector Emitter Breakdown (Max) | 18V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 50mA, 5V |
| Frequency - Transition | 175MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | TO-39 |
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