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SD1013-03

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SD1013-03

RF TRANS NPN 35V 150MHZ M113

Manufacturer: Microsemi Corporation

Categories: Bipolar RF Transistors

Quality Control: Learn More

Microsemi Corporation's SD1013-03 is a robust NPN bipolar RF transistor designed for high-power applications. Featuring a 35V collector-emitter breakdown voltage and a maximum collector current of 1A, this component delivers up to 13W of power output at a 150MHz operating frequency. The transistor exhibits a minimum DC current gain (hFE) of 10 at 200mA and 5V, with a typical gain of 10dB. Its M113 chassis mount package facilitates efficient thermal management, crucial for operation at its specified junction temperature of 200°C. This device is commonly utilized in industrial and defense applications requiring reliable RF power amplification.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseM113
Mounting TypeChassis Mount
Transistor TypeNPN
Operating Temperature200°C (TJ)
Gain10dB
Power - Max13W
Current - Collector (Ic) (Max)1A
Voltage - Collector Emitter Breakdown (Max)35V
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 200mA, 5V
Frequency - Transition150MHz
Noise Figure (dB Typ @ f)-
Supplier Device PackageM113

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