SD1013-03
RF TRANS NPN 35V 150MHZ M113Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's SD1013-03 is a robust NPN bipolar RF transistor designed for high-power applications. Featuring a 35V collector-emitter breakdown voltage and a maximum collector current of 1A, this component delivers up to 13W of power output at a 150MHz operating frequency. The transistor exhibits a minimum DC current gain (hFE) of 10 at 200mA and 5V, with a typical gain of 10dB. Its M113 chassis mount package facilitates efficient thermal management, crucial for operation at its specified junction temperature of 200°C. This device is commonly utilized in industrial and defense applications requiring reliable RF power amplification.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | M113 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 10dB |
| Power - Max | 13W |
| Current - Collector (Ic) (Max) | 1A |
| Voltage - Collector Emitter Breakdown (Max) | 35V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 200mA, 5V |
| Frequency - Transition | 150MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | M113 |