S200-50
RF TRANS NPN 110V 30MHZ 55HXManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
Quality Control: Learn More
The Microsemi Corporation S200-50 is an NPN bipolar RF transistor designed for high-power applications. This chassis-mount device operates within a frequency range of 1.5MHz to 30MHz, delivering a power output of up to 320W. It features a maximum collector current of 30A and a collector-emitter breakdown voltage of 110V. The DC current gain (hFE) is a minimum of 10 at 1A and 5V. With a typical gain of 12dB to 14.5dB, and an operating junction temperature of 150°C, the S200-50 is suitable for demanding RF power amplification stages in industrial, broadcast, and telecommunications equipment. The component is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55HX |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 12dB ~ 14.5dB |
| Power - Max | 320W |
| Current - Collector (Ic) (Max) | 30A |
| Voltage - Collector Emitter Breakdown (Max) | 110V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 1A, 5V |
| Frequency - Transition | 1.5MHz ~ 30MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55HX |
Request a Quote
Clients Also Buy
MSC1175M
RF TRANS NPN 65V 1.15GHZ M218
UTV005
RF TRANS NPN 24V 860MHZ 55FT
1014-6A
RF TRANS NPN 50V 1.4GHZ 55LV
