MSC1450M
RF TRANS NPN 65V 1.09GHZ M216Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation NPN RF Power Transistor, part number MSC1450M, is designed for demanding high-power RF applications. This chassis mount device operates with a collector-emitter breakdown voltage of 65V and a maximum collector current of 28A. Featuring a transition frequency of 1.09GHz and a typical gain of 7dB, the MSC1450M delivers 910W of power. It exhibits a minimum DC current gain (hFE) of 15 at 1A and 5V. The M216 package is suitable for robust thermal management, supporting an operating junction temperature of 250°C. This component finds application in industries such as defense, aerospace, and industrial RF power generation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | M216 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 250°C (TJ) |
| Gain | 7dB |
| Power - Max | 910W |
| Current - Collector (Ic) (Max) | 28A |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 1A, 5V |
| Frequency - Transition | 1.09GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | M216 |
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