MSC1450A
RF TRANS 65V M216Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's MSC1450A is a high-power RF bipolar transistor designed for robust performance in demanding applications. Featuring a 65V collector-emitter breakdown voltage and a maximum collector current of 28A, this device delivers up to 910W of power. The M216 chassis mount package facilitates efficient thermal management, crucial for sustained operation at its 250°C operating temperature. With a typical gain of 7dB, the MSC1450A is suitable for power amplification stages in industrial, defense, and telecommunications systems requiring reliable RF power delivery. The minimum DC current gain (hFE) is specified at 15 at 1A, 5V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | M216 |
| Mounting Type | Chassis Mount |
| Transistor Type | - |
| Operating Temperature | 250°C |
| Gain | 7dB |
| Power - Max | 910W |
| Current - Collector (Ic) (Max) | 28A |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 1A, 5V |
| Frequency - Transition | - |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | M216 |
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