MSC1400M
RF TRANS NPN 65V 1.15GHZ M216Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's MSC1400M is an NPN bipolar RF transistor designed for high-power applications. This component operates within a frequency range of 1.025GHz to 1.15GHz, offering a typical gain of 6.5dB. It features a maximum collector current of 28A and a collector-emitter breakdown voltage of 65V. With a power dissipation capability of 1000W and a robust chassis mount configuration, the MSC1400M is suitable for demanding environments. The transistor exhibits a minimum DC current gain (hFE) of 15 at 1A and 5V. Its operating junction temperature can reach up to 250°C. This device is utilized in critical applications such as radar systems and high-power RF amplification, commonly found in aerospace and defense, and industrial sectors. The component is supplied in Bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | M216 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 250°C (TJ) |
| Gain | 6.5dB |
| Power - Max | 1000W |
| Current - Collector (Ic) (Max) | 28A |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 1A, 5V |
| Frequency - Transition | 1.025GHz ~ 1.15GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | M216 |
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