Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Bipolar RF Transistors

MSC1350M

Banner
productimage

MSC1350M

RF TRANS NPN 65V 1.15GHZ M218

Manufacturer: Microsemi Corporation

Categories: Bipolar RF Transistors

Quality Control: Learn More

Microsemi Corporation's MSC1350M is an NPN bipolar RF transistor designed for high-power applications. This chassis-mount component operates across a frequency range of 1.025GHz to 1.15GHz, delivering a typical gain of 7dB to 7.1dB. It features a maximum collector current (Ic) of 19.8A and a collector-emitter breakdown voltage (Vce) of 65V. With a maximum power dissipation of 720W and a junction temperature rating of 200°C, the MSC1350M is suitable for demanding RF power amplification in sectors such as telecommunications and industrial equipment. The M218 package facilitates efficient thermal management.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseM218
Mounting TypeChassis Mount
Transistor TypeNPN
Operating Temperature200°C (TJ)
Gain7dB ~ 7.1dB
Power - Max720W
Current - Collector (Ic) (Max)19.8A
Voltage - Collector Emitter Breakdown (Max)65V
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 1A, 5V
Frequency - Transition1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f)-
Supplier Device PackageM218

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
SD1332-05C

RF TRANS NPN 15V 5.5GHZ M150

product image
2003

RF TRANS NPN 50V 2GHZ 55BT-1

product image
JANTXV2N2857UB

RF TRANS NPN 15V 0.04A UB