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MSC1175MA

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MSC1175MA

RF TRANS NPN 65V 1.15GHZ M218

Manufacturer: Microsemi Corporation

Categories: Bipolar RF Transistors

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Microsemi Corporation's MSC1175MA is an NPN bipolar RF transistor designed for high-power applications. This component operates within a frequency range of 1.025GHz to 1.15GHz, offering a typical gain of 8dB. It features a collector current capability of 12A and a collector-emitter breakdown voltage of 65V. The MSC1175MA is built for demanding thermal environments, with an operating temperature rating of 250°C, and utilizes a robust chassis mount package (M218) for efficient heat dissipation. Its high power handling capacity of 400W makes it suitable for use in power amplification stages across various RF communication systems, including base stations, radar, and industrial heating applications. The device exhibits a minimum DC current gain (hFE) of 15 at 1A and 5V.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseM218
Mounting TypeChassis Mount
Transistor TypeNPN
Operating Temperature250°C
Gain8dB
Power - Max400W
Current - Collector (Ic) (Max)12A
Voltage - Collector Emitter Breakdown (Max)65V
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 1A, 5V
Frequency - Transition1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f)-
Supplier Device PackageM218

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