MSC1175M
RF TRANS NPN 65V 1.15GHZ M218Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's MSC1175M is an NPN bipolar RF transistor designed for high-power applications. This chassis mount device, packaged in the M218 configuration, handles a maximum collector current of 12A and a collector-emitter breakdown voltage of 65V. It operates within a frequency range of 1.025GHz to 1.15GHz, offering a typical gain of 8dB. The MSC1175M is rated for a maximum power output of 400W and features a high junction temperature capability of 250°C. Its robust construction and performance characteristics make it suitable for demanding applications in wireless infrastructure, radar systems, and industrial heating. The minimum DC current gain (hFE) is specified as 15 at 1A and 5V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | M218 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 250°C (TJ) |
| Gain | 8dB |
| Power - Max | 400W |
| Current - Collector (Ic) (Max) | 12A |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 1A, 5V |
| Frequency - Transition | 1.025GHz ~ 1.15GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | M218 |
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